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AS7C31026B-12JCN Datasheet(PDF) 2 Page - Alliance Semiconductor Corporation |
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AS7C31026B-12JCN Datasheet(HTML) 2 Page - Alliance Semiconductor Corporation |
2 / 10 page ® AS7C31026B 3/26/04, v 1.3 Alliance Semiconductor P. 2 of 10 Functional description The AS7C31026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access times (tOE) of 5, 6, 7, 8 ns are ideal for high-performance applications. When CE is high, the device enters standby mode. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O0 through I/O15 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting output enable (OE) and chip enable (CE) with write enable (WE) high. The chips drive I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive or write enable is active, output drivers stay in high-impedance mode. The device provides multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and read. LB controls the lower bits, I/O0 through I/O7, and UB controls the higher bits, I/O8 through I/O15. All chip inputs and outputs are TTL-compatible, and operation is from a single 3.3 V supply. The device is packaged in common industry standard packages. Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and func- tional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Key: H = high, L = low, X = don’t care. Absolute maximum ratings Parameter Symbol Min Max Unit Voltage on VCC relative to GND Vt1 –0.50 +5.0 V Voltage on any pin relative to GND Vt2 –0.50 VCC +0.50 V Power dissipation PD –1.0 W Storage temperature (plastic) Tstg –65 +150 °C Ambient temperature with VCC applied Tbias –55 +125 °C DC current into outputs (low) IOUT –20 mA Truth table CE WE OE LB UB I/O0–I/O7 I/O8–I/O15 Mode H X X X X High Z High Z Standby (ISB), ISBI) LH L L H DOUT High Z Read I/O0–I/O7 (ICC) L H L H L High Z DOUT Read I/O8–I/O15 (ICC) L H LLL DOUT DOUT Read I/O0–I/O15 (ICC) LL X L L DIN DIN Write I/O0–I/O15 (ICC) LL X L H DIN High Z Write I/O0–I/O7 (ICC) L L X H L High Z DIN Write I/O8–I/O15 (ICC) L L H X H X X H X H High Z High Z Output disable (ICC) |
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