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K4E660412E-JP50 Datasheet(PDF) 1 Page - Samsung semiconductor |
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K4E660412E-JP50 Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 21 page CMOS DRAM K4E660412E,K4E640412E Industrial Temperature This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor- mal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricated using Samsung ′s advanced CMOS process to realize high band-width, low power consumption and high reliability. • Extended Data Out Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • Self-refresh capability (L-ver only) • Fast parallel test mode capability • LVTTL(3.3V) compatible inputs and outputs • Early Write or output enable controlled write • JEDEC Standard pinout • Available in Plastic SOJ and TSOP(II) packages • +3.3V ±0.3V power supply • Industrial Temperature operating ( -40~85 °C ) Control Clocks RAS CAS W Vcc Vss A0~A12 (A0~A11)*1 A0~A10 (A0~A11)*1 Memory Array 16,777,216 x 4 Cells SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. DESCRIPTION FUNCTIONAL BLOCK DIAGRAM Note) *1 : 4K Refresh • Refresh Cycles Part NO. Refresh cycle Refresh time Normal L-ver K4E660412E* 8K 64ms 128ms K4E640412E 4K Unit : mW DQ0 to DQ3 Data out Buffer Data in Buffer * Access mode & RAS only refresh mode : 8K cycle/64ms(Normal), 8K cycle/128ms(L-ver.) CAS -before-RAS & Hidden refresh mode : 4K cycle/64ms(Normal), 4K cycle/128ms(L-ver.) • Active Power Dissipation Speed 8K 4K -45 324 432 -50 288 396 -60 252 360 • Performance Range Speed tRAC tCAC tRC tHPC -45 45ns 12ns 74ns 17ns -50 50ns 13ns 84ns 20ns -60 60ns 15ns 104ns 25ns Row Decoder Column Decoder VBB Generator Refresh Timer Refresh Control Refresh Counter Row Address Buffer Col. Address Buffer • Part Identification - K4E660412E-JI/P(3.3V, 8K Ref., SOJ) - K4E640412E-JI/P(3.3V, 4K Ref., SOJ) - K4E660412E-TI/P(3.3V, 8K Ref., TSOP) - K4E640412E-TI/P(3.3V, 4K Ref., TSOP) FEATURES 16M x 4bit CMOS Dynamic RAM with Extended Data Out |
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