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AS7C33128NTD32B-133TQCN Datasheet(PDF) 5 Page - Alliance Semiconductor Corporation

Part # AS7C33128NTD32B-133TQCN
Description  3.3V 128Kx32/36 Pipelined SRAM with NTD
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C33128NTD32B-133TQCN Datasheet(HTML) 5 Page - Alliance Semiconductor Corporation

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AS7C33128NTD32B
AS7C33128NTD36B
2/8/05; v.1.5
Alliance Semiconductor
P. 5 of 18
Signal descriptions
Snooze Mode
SNOOZE MODE is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of SNOOZE
MODE is dictated by the length of time the ZZ is in a High state.
The ZZ pin is an asynchronous, active high input that causes the device to enter SNOOZE MODE.
When the ZZ pin becomes a logic High, ISB2 is guaranteed after the time tZZI is met. After entering SNOOZE MODE, all inputs except ZZ is
disabled and all outputs go to High-Z. Any operation pending when entering SNOOZE MODE is not guaranteed to successfully complete.
Therefore, SNOOZE MODE (READ or WRITE) must not be initiated until valid pending operations are completed. Similarly, when exiting
SNOOZE MODE during tPUS, only a DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE MODE.
Burst order
Signal
I/O
Properties Description
CLK
I
CLOCK
Clock. All inputs except OE, LBO, and ZZ are synchronous to this clock.
CEN
I
SYNC
Clock enable. When de-asserted high, the clock input signal is masked.
A, A0, A1
I
SYNC
Address. Sampled when all chip enables are active and ADV/LD is asserted.
DQ[a,b,c,d]
I/O
SYNC
Data. Driven as output when the chip is enabled and OE is active.
CE0, CE1,
CE2
ISYNC
Synchronous chip enables. Sampled at the rising edge of CLK, when ADV/LD is asserted. Are
ignored when ADV/LD is high.
ADV/LD
ISYNC
Advance or Load. When sampled high, the internal burst address counter will increment in the
order defined by the LBO input value. When low, a new address is loaded.
R/W
ISYNC
A high during LOAD initiates a READ operation. A low during LOAD initiates a WRITE
operation. Is ignored when ADV/LD is high.
BW[a,b,c,d]
ISYNC
Byte write enables. Used to control write on individual bytes. Sampled along with WRITE
command and BURST WRITE.
OE
I
ASYNC
Asynchronous output enable. I/O pins are not driven when OE is inactive.
LBO
ISTATIC
Selects Burst mode. When tied to VDD or left floating, device follows interleaved Burst order. When
driven Low, device follows linear Burst order. This signal is internally pulled High.
ZZ
I
ASYNC
Snooze. Places device in low power mode; data is retained. Connect to GND if unused.
NC
-
-
No connect
Interleaved burst order (LBO = 1)
Linear burst order (LBO = 0)
A1 A0
A1 A0
A1 A0
A1 A0
A1 A0
A1 A0
A1 A0
A1 A0
Starting address
0 00 11 0
1 1
Starting Address
0 00 11 01 1
First increment
0 1
0 0
1 1
1 0
First increment
0 1
1 0
1 1
0 0
Second increment
1 0
1 1
0 0
0 1
Second increment
1 0
1 1
0 0
0 1
Third increment
1 1
1 0
0 1
0 0
Third increment
1 1
0 0
0 1
1 0


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