®

AS7C33512NTD18A

11/30/04;

v.2.1

Alliance Semiconductor

7 of 19

State Diagram for NTD SRAM

Recommended operating conditions at 3.3V I/O

Recommended operating conditions at 2.5V I/O

1

Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and func-

tional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied.

Exposure to absolute maximum rating conditions may affect reliability.

Parameter

Symbol

Min

Max

Unit

Power supply voltage relative to GND

–0.5

+4.6

V

Input voltage relative to GND (input pins)

–0.5

V

Input voltage relative to GND (I/O pins)

–0.5

V

Power dissipation

–1.8

W

DC output current

–50

mA

Storage temperature (plastic)

–65

+150

°C

Temperature under bias

–65

+135

°C

Parameter

Symbol

Min

Nominal

Max

Unit

Supply voltage for inputs

3.135

3.3

3.465

V

Supply voltage for I/O

3.135

3.3

3.465

V

Ground supply

Vss

0

0

0

V

Parameter

Symbol

Min

Nominal

Max

Unit

Supply voltage for inputs

3.135

3.3

3.465

V

Supply voltage for I/O

2.375

2.5

2.625

V

Ground supply

Vss

0

0

0

V

Dsel

Read

Burst

Burst

Write

Read

Write

Burst

Read

Dsel

Read

Burst

Write

Dse

l

Wri

te

Burst

Dsel

Burst

Burst

Write

Read