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AS9C25128M2036L-133FI Datasheet(PDF) 9 Page - Alliance Semiconductor Corporation |
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AS9C25128M2036L-133FI Datasheet(HTML) 9 Page - Alliance Semiconductor Corporation |
9 / 30 page AS9C25256M2036L AS9C25128M2036L 9/30/04, v.1.3 Alliance Semiconductor P. 9 of 30 ® Package Thermal Resistance Notes: 1. This parameter is sampled. Capacitance[1] (TA = +25 °C, F = 1.0 Mhz)[2] Notes: 1. Sampled, not 100% tested 2. TA stands for 'Ambient temperature'. 3. L = 0V; H = 3V Absolute maximum ratings[1] Notes: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating for extended periods may affect reliability. Description Conditions Symbol Typical Units Thermal Resistance (junction to ambient)[1] Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/JESD51 BGA θJA TBD °C/W fpBGA θJA TBD °C/W PQFP θJA TBD °C/W Thermal Resistance (junction to top of case)[1] θJC TBD °C/W Parameter Symbol Signals Test Condition[3] BGA (Max) fpBGA (Max) PQFP (Max) Unit Input Capacitance CIN Address and Control pins VIN = L to H or H to L TBD TBD TBD pF Output Capacitance COUT Flag Output pins VOUT = L to H or H to L TBD TBD TBD pF I/O Capacitance CI/O I/O pins VI/O = L to H or H to L TBD TBD TBD pF Rating Parameter Symbol Min Max Unit Core supply voltage relative to VSS VDD -0.5 3.6 V I/O supply voltage relative to VSS VDDQ -0.3 3.9 V Input and I/O voltage relative to VSS VIN -0.3 VDDQ + 0.3 V Power Dissipation PD -TBD W Short circuit output current IOUT -TBD mA Storage Temperature TSTG -65 150 °C Storage Temperature under Bias TBIAS -55 125 °C Junction Temperature TJN -TBD °C |
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