2N6071B datasheet(1/2 Pages) CENTRAL

Part #	2N6071B

Description	SENSITIVE GATE TRIAC 4.0 AMPS, 200 THRU 600 VOLTS

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Manufacturer	CENTRAL [Central Semiconductor Corp]

Direct Link	http://www.centralsemi.com

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2N6071, A, B

2N6073, A, B

2N6075, A, B

SENSITIVE GATE TRIAC

4.0 AMPS, 200 THRU 600 VOLTS

TO-126 CASE

Central

Semiconductor Corp.

TM

R0 (27-April 2004)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6071, A, B

series types are silicon sensitive gate triacs

designed for such applications as light dimmers,

motor controls, heating controls and power

supplies.

MARKING CODE: FULL PART NUMBER

MAXIMUM RATINGS: (TJ=25°C unless otherwise noted)

2N6071

2N6073

2N6075

2N6071A

2N6073A

2N6075A

SYMBOL

2N6071B

2N6073B

2N6075B

UNITS

Peak Repetitive Off-State Voltage

VDRM, VRRM

200

400

600

V

RMS On-State Current (TC=85°C)

IT(RMS)

4.0

A

Peak One Cycle Surge (60Hz, TJ=110°C)

ITSM

30

A

I2t Value for Fusing (t=8.3ms)

I2t

3.7

A2s

Peak Gate Power (TC=85°C)

PGM

10

W

Average Gate Power (t=8.3ms, TC=85°C)

PG(AV)

0.5

W

Peak Gate Voltage (TC=85°C)

VGM

5.0

V

Storage Temperature

Tstg

-40 to +150

°C

Junction Temperature

TJ

-40 to +110

°C

Thermal Resistance

ΘJC

3.5

°C/W

Thermal Resistance

ΘJA

75

°C/W

Maximum Lead Temperature

TL

260

°C

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

A Series

B Series

SYMBOL

TEST CONDITIONS

TYP MAX

UNITS

IDRM, IRRM

VD=Rated VDRM, VRRM, TJ=25°C

10

µA

IDRM, IRRM

VD=Rated VDRM, VRRM, TJ=110°C

2.0

mA

IGT

VD=12V, RL=100Ω, QUAD I, TJ=25°C

30

5.0

3.0

mA

IGT

VD=12V, RL=100Ω, QUAD II, TJ=25°C

-

5.0

3.0

mA

IGT

VD=12V, RL=100Ω, QUAD III, TJ=25°C

30

5.0

3.0

mA

IGT

VD=12V, RL=100Ω, QUAD IV, TJ=25°C

-

10

5.0

mA

IGT

VD=12V, RL=100Ω, QUAD I, TJ= -40°C

60

20

15

mA

IGT

VD=12V, RL=100Ω, QUAD II, TJ= -40°C

-

20

15

mA

IGT

VD=12V, RL=100Ω, QUAD III, TJ= -40°C

60

20

15

mA

IGT

VD=12V, RL=100Ω, QUAD IV, TJ= -40°C

-

30

20

mA

IH

VD=12V, IT=1.0A, TJ=25°C

30

15

mA

IH

VD=12V, IT=1.0A, TJ= -40°C

70

30

mA

VGT

VD=12V, RL=100Ω, TJ=25°C, QUAD I, II, III, IV

2.0

V

VGT

VD=12V, RL=100Ω, TJ= -40°C, QUAD I, II, III, IV

2.5

V

VTM

ITM=6.0A

2.0

V

ton

ITM=14A, IGT=100mA

1.5

µs

dv/dt

VD= Rated VDRM, ITM=5.7A, TJ=85°C

5.0

V/µs

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