MMBT2222L datasheet(2/8 Pages) ONSEMI

Part #	MMBT2222L

Description	General Purpose Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MMBT2222LT1, MMBT2222ALT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector − Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)

MMBT2222

MMBT2222A

V(BR)CEO

30

40

−

Vdc

Collector − Base Breakdown Voltage (IC = 10 mAdc, IE = 0)

MMBT2222

MMBT2222A

V(BR)CBO

60

75

−

Vdc

Emitter − Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

MMBT2222

MMBT2222A

V(BR)EBO

5.0

6.0

−

Vdc

Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

MMBT2222A

ICEX

−

10

nAdc

Collector Cutoff Current (VCB = 50 Vdc, IE = 0)

MMBT2222

(VCB = 60 Vdc, IE = 0)

MMBT2222A

(VCB = 50 Vdc, IE = 0, TA = 125°C)

MMBT2222

(VCB = 60 Vdc, IE = 0, TA = 125°C)

MMBT2222A

ICBO

−

0.01

10

mAdc

Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0)

MMBT2222A

IEBO

−

100

nAdc

Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

MMBT2222A

IBL

−

20

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 0.1 mAdc, VCE = 10 Vdc)

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C)

MMBT2222A only

(IC = 150 mAdc, VCE = 10 Vdc) (Note 3)

(IC = 150 mAdc, VCE = 1.0 Vdc) (Note 3)

(IC = 500 mAdc, VCE = 10 Vdc) (Note 3)

MMBT2222

MMBT2222A

hFE

35

50

75

35

100

50

30

40

−

300

−

Collector − Emitter Saturation Voltage (Note 3)

(IC = 150 mAdc, IB = 15 mAdc)

MMBT2222

MMBT2222A

(IC = 500 mAdc, IB = 50 mAdc)

MMBT2222

MMBT2222A

VCE(sat)

−

0.4

0.3

1.6

1.0

Vdc

Base − Emitter Saturation Voltage (Note 3)

(IC = 150 mAdc, IB = 15 mAdc)

MMBT2222

MMBT2222A

(IC = 500 mAdc, IB = 50 mAdc)

MMBT2222

MMBT2222A

VBE(sat)

−

0.6

−

1.3

1.2

2.6

2.0

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current − Gain − Bandwidth Product (Note 4)

(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)

MMBT2222

MMBT2222A

fT

250

300

−

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

8.0

pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

MMBT2222

MMBT2222A

Cibo

−

30

25

pF

Input Impedance

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

hie

2.0

0.25

8.0

1.25

k

W

Voltage Feedback Ratio

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

hre

−

8.0

4.0

X 10−4

Small − Signal Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

MMBT2222A

hfe

50

75

300

375

−

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

4. fT is defined as the frequency at which |hfe| extrapolates to unity.

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