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MMBT3906LT1 Datasheet(PDF) 2 Page - ON Semiconductor |
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MMBT3906LT1 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 6 page  MMBT3906LT1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector − Emitter Breakdown Voltage (IC = −1.0 mAdc, IB = 0) V(BR)CEO −40 — Vdc Collector − Base Breakdown Voltage (IC = −10 mAdc, IE = 0) V(BR)CBO −40 — Vdc Emitter − Base Breakdown Voltage (IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 — Vdc Base Cutoff Current (VCE = −30 Vdc, VEB = −3.0 Vdc) IBL — −50 nAdc Collector Cutoff Current (VCE = −30 Vdc, VEB = −3.0 Vdc) ICEX — −50 nAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) HFE 60 80 100 60 30 — — 300 — — — Collector − Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) — — −0.25 −0.4 Vdc Base − Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VBE(sat) −0.65 — −0.85 −0.95 Vdc SMALL−SIGNAL CHARACTERISTICS Current − Gain — Bandwidth Product (IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) fT 250 — MHz Output Capacitance (VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo — 4.5 pF Input Capacitance (VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 10 pF Input Impedance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hie 2.0 12 k Ω Voltage Feedback Ratio (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hre 0.1 10 X 10−4 Small − Signal Current Gain (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hfe 100 400 — Output Admittance (IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz) hoe 3.0 60 mmhos Noise Figure (IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) NF — 4.0 dB SWITCHING CHARACTERISTICS Delay Time (VCC = −3.0 Vdc, VBE = 0.5 Vdc, td — 35 ns Rise Time (VCC 3.0 Vdc, VBE 0.5 Vdc, IC = −10 mAdc, IB1 = −1.0 mAdc) tr — 35 ns Storage Time (VCC = −3.0 Vdc, IC = −10 mAdc, ts — 225 ns Fall Time (VCC 3.0 Vdc, IC 10 mAdc, IB1 = IB2 = −1.0 mAdc) tf — 75 ns 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit 3 V 275 10 k 1N916 CS < 4 pF* 3 V 275 10 k CS < 4 pF* < 1 ns +0.5 V 10.6 V 300 ns DUTY CYCLE = 2% < 1 ns +9.1 V 10.9 V DUTY CYCLE = 2% t1 0 10 < t1 < 500 ms * Total shunt capacitance of test jig and connectors |
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