NPN MMBT3904WT1 PNP MMBT3906WT1

9

Motorola Small–Signal Transistors, FETs and Diodes Device Data

MMBT3906WT1

STATIC CHARACTERISTICS

Figure 31. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.7

1.0

2.0

0.2

0.1

0.5

2.0

3.0

10

50

70

0.2

0.3

0.1

100

1.0

0.7

200

30

20

5.0

7.0

VCE = 1.0 V

TJ = +125°C

+25

°C

–55

°C

MMBT3906WT1

Figure 32. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

0.5

2.0

3.0

10

0.2

0.3

0

1.0

0.7

5.0

7.0

IC = 1.0 mA

TJ = 25°C

0.07

0.05

0.03

0.02

0.01

10 mA

30 mA

100 mA

MMBT3906WT1

Figure 33. “ON” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

Figure 34. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

1.0

2.0

5.0 10

20

50

0

100

–0.5

0

0.5

1.0

0

60

80

120

140

160

180

20

40

100

200

–1.0

–1.5

–2.0

200

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 1.0 V

+25

°C TO +125°C

–55

°C TO +25°C

+25

°C TO +125°C

–55

°C TO +25°C

qVC FOR VCE(sat)

qVS FOR VBE(sat)

MMBT3906WT1

MMBT3906WT1