PDTC143XM datasheet(5/12 Pages) PHILIPS

Part #	PDTC143XM

Description	NPN resistor-equipped transistors; R1 = 4.7 kW, R2 = 10 kW

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Manufacturer	PHILIPS [NXP Semiconductors]

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PDTC143X_SER_9

Product data sheet

Rev. 09 — 26 July 2005

5 of 12

Philips Semiconductors

PDTC143X series

NPN resistor-equipped transistors; R1 = 4.7 k

Ω, R2 = 10 kΩ

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2]

Reﬂow soldering is the only recommended soldering method.

[3]

Device mounted on an FR4 PCB with 60

µm copper strip line, standard footprint.

7.

Characteristics

Table 7:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

SOT416

[1] -

-

833

K/W

SOT490

[1] [2] -

-

500

K/W

SOT346

[1] -

-

500

K/W

SOT883

[2] [3] -

-

500

K/W

SOT54

[1] -

-

250

K/W

SOT23

[1] -

-

500

K/W

SOT323

[1] -

-

625

K/W

Table 8:

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =50V; IE = 0 A

-

100

nA

ICEO

collector-emitter

cut-off current

VCE =30V; IB =0A

-

1

µA

VCE =30V; IB =0A;

Tj = 150 °C

--

50

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC = 0 A

-

600

µA

hFE

DC current gain

VCE =5V; IC =10mA

50

-

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

-

100

mV

VI(off)

off-state input voltage

VCE =5V; IC = 100 µA

-

0.3

V

VI(on)

on-state input voltage

VCE = 300 mV; IC =20mA

2.5

-

V

R1

bias resistor 1 (input)

3.3

4.7

6.1

k

Ω

R2/R1

bias resistor ratio

1.7

2.1

2.6

Cc

collector capacitance

VCB =10V; IE =ie =0A;

f=1MHz

-

2.5

pF

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