MMBT5088LT1 MMBT5089LT1

http://onsemi.com

2

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 100 µAdc, VCE = 5.0 Vdc)

MMBT5088

MMBT5089

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

MMBT5088

MMBT5089

(IC = 10 mAdc, VCE = 5.0 Vdc)

MMBT5088

MMBT5089

hFE

300

400

350

450

300

400

900

1200

—

—

—

—

—

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

VCE(sat)

—

0.5

Vdc

Base–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

VBE(sat)

—

0.8

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz)

fT

50

—

MHz

Collector–Base Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded)

Ccb

—

4.0

pF

Emitter–Base Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded)

Ceb

—

10

pF

Small Signal Current Gain

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

MMBT5088

MMBT5089

hfe

350

450

1400

1800

—

Noise Figure

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz)

MMBT5088

MMBT5089

NF

—

—

3.0

2.0

dB

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model