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MMBT5089LT1 Datasheet(PDF) 2 Page - ON Semiconductor |
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MMBT5089LT1 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page MMBT5088LT1 MMBT5089LT1 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 100 µAdc, VCE = 5.0 Vdc) MMBT5088 MMBT5089 (IC = 1.0 mAdc, VCE = 5.0 Vdc) MMBT5088 MMBT5089 (IC = 10 mAdc, VCE = 5.0 Vdc) MMBT5088 MMBT5089 hFE 300 400 350 450 300 400 900 1200 — — — — — Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) — 0.5 Vdc Base–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) — 0.8 Vdc SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz) fT 50 — MHz Collector–Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded) Ccb — 4.0 pF Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded) Ceb — 10 pF Small Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) MMBT5088 MMBT5089 hfe 350 450 1400 1800 — Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 kΩ, f = 1.0 kHz) MMBT5088 MMBT5089 NF — — 3.0 2.0 dB RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model |
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