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GWM160-0055P3 Datasheet(PDF) 3 Page - IXYS Corporation |
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GWM160-0055P3 Datasheet(HTML) 3 Page - IXYS Corporation |
3 / 3 page © 2004 IXYS All rights reserved 3 - 3 GWM 160-0055P3 IXYS reserves the right to change limits, test conditions and dimensions. -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 0 100 200 300 0.0 0.3 0.6 0.9 1.2 R DSon I D A V DS T VJ C V GS V V T VJ = 25°C R DSon(25°C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150 200 250 300 350 400 -I D V SD A T VJ = 25°C T VJ = 125°C V GS = 0 V 13 57 0 2468 0 50 100 150 200 250 300 0 20406080 100 0 2 4 6 8 10 I D V GS A T VJ = 25°C T VJ = 125°C 0.00001 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 t s K/W Z thJC 0 V Q G nC V V GS = 8 V 10 V 12 V V DS = 14 V V DS = 44 V I D = 25 A Fig. 1: typ. output characteristics [V DS = ID (RDSon + 2x Rpin to chip)] Fig. 4: typ. gate charge characteristics Fig. 6: typ. transient thermal impedance Fig. 2: typ. dependence of R DSon on temperature Fig. 3: typ.transfer characteristics Fig. 5: typ. conduction characteristics of body diode |
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