MMBTA13LT1 datasheet(2/8 Pages) ONSEMI

Part #	MMBTA13LT1

Description	Darlington Amplifier Transistors(NPN Silicon)

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MMBTA13LT1 MMBTA14LT1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(3)

DC Current Gain

(IC = 10 mAdc, VCE = 5.0 Vdc)

MMBTA13

MMBTA14

(IC = 100 mAdc, VCE = 5.0 Vdc)

MMBTA13

MMBTA14

hFE

5000

10,000

20,000

—

Collector–Emitter Saturation Voltage

(IC = 100 mAdc, IB = 0.1 mAdc)

VCE(sat)

—

1.5

Vdc

Base–Emitter On Voltage

(IC = 100 mAdc, VCE = 5.0 Vdc)

VBE

—

2.0

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product(4)

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

fT

125

—

MHz

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

4. fT = |hfe| • ftest.

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

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