Darlington Amplifier

Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCES

30

Vdc

Collector–Base Voltage

VCBO

30

Vdc

Emitter–Base Voltage

VEBO

10

Vdc

Collector Current — Continuous

IC

300

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board(1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance Junction to Ambient

RqJA

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance Junction to Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

–55 to +150

°C

DEVICE MARKING

MMBTA13LT1 = 1M; MMBTA14LT1 = 1N

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 100 mAdc, VBE = 0)

V(BR)CES

30

—

Vdc

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

ICBO

—

100

nAdc

Emitter Cutoff Current

(VEB = 10 Vdc, IC = 0)

IEBO

—

100

nAdc

1. FR–5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in. 99.5% alumina.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductort

© Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 1

1

Publication Order Number:

MMBTA13LT1/D

MMBTA13LT1

MMBTA14LT1

MMBTA14LT1 is a Preferred Device

1

2

3

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

COLLECTOR 3

BASE

1

EMITTER 2