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IDT70V9199 Datasheet(PDF) 5 Page - Integrated Device Technology

Part # IDT70V9199
Description  HIGH-SPEED 3.3V 128K x9/x8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT70V9199 Datasheet(HTML) 5 Page - Integrated Device Technology

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6.42
IDT70V9199/099L
High-Speed 3.3V 128K x9/x8 Dual-Port Synchronous Pipelined Static RAM
Industrial and Commercial Temperature Ranges
5
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V ± 0.3V)
NOTE:
1. At VDD < 2.0V input leakages are undefined.
RecommendedOperating
Temperature and Supply Voltage(1)
Recommended DC Operating
Conditions
Absolute Maximum Ratings(1)
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. COUT also references CI/O.
Capacitance(1)
(TA = +25°C, f = 1.0MHZ)
NOTES:
1. VIL > -1.5V for pulse width less than 10 ns.
2. VTERM must not exceed VDD +0.3V.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VTERM must not exceed VDD +0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of VTERM > VDD + 0.3V.
3. Ambient Temperature Under DC Bias. No AC Conditions. Chip deselect.
NOTES:
1. This is the parameter TA. This is the "instant on" case temperature.
Grade
Ambient
Temperature(2)
GND
VDD
Commercial
0OC to +70OC0V
3.3V
+ 0.3V
Industrial
-40OC to +85OC0V
3.3V
+ 0.3V
4859 tbl 04
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
3.0
3.3
3.6
V
VSS
Ground
0
0
0
V
VIH
Input High Voltage
2.0
____
VDD+0.3V(2)
V
VIL
Input Low Voltage
-0.3(1)
____
0.8
V
4859 tbl 05
Symbol
Rating
Commercial
& Industrial
Unit
VTERM(2)
Terminal Voltage
with Respect to
GND
-0.5 to +4.6
V
TBIAS(3)
Temperature
Under Bias
-55 to +125
o
C
TSTG
Storage
Temperature
-65 to +150
o
C
TJN
Junction Temperature
+150
o
C
IOUT
DC Output Current
50
mA
4859 tbl 06
Symbol
Parameter
Conditions(2)
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
9
pF
COUT(3)
Output Capacitance
VOUT = 3dV
10
pF
4859 tbl 07
Symbol
Parameter
Test Conditions
70V9199/099L
Unit
Min.
Max.
|ILI|
Input Leakage Current(1)
VDD = 3.6V, VIN = 0V to VDD
___
5µA
|ILO|
Output Leakage Current
CE
= VIH or CE1 = VIL, VOUT = 0V to VDD
___
5µA
VOL
Output Low Voltage
IOL = +4mA
___
0.4
V
VOH
Output High Voltage
IOH = -4mA
2.4
___
V
4859 tbl 08


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