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IDT70V9199 Datasheet(PDF) 5 Page - Integrated Device Technology |
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IDT70V9199 Datasheet(HTML) 5 Page - Integrated Device Technology |
5 / 17 page 6.42 IDT70V9199/099L High-Speed 3.3V 128K x9/x8 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges 5 DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (VDD = 3.3V ± 0.3V) NOTE: 1. At VDD < 2.0V input leakages are undefined. RecommendedOperating Temperature and Supply Voltage(1) Recommended DC Operating Conditions Absolute Maximum Ratings(1) NOTES: 1. These parameters are determined by device characterization, but are not production tested. 2. 3dV references the interpolated capacitance when the input and output switch from 0V to 3V or from 3V to 0V. 3. COUT also references CI/O. Capacitance(1) (TA = +25°C, f = 1.0MHZ) NOTES: 1. VIL > -1.5V for pulse width less than 10 ns. 2. VTERM must not exceed VDD +0.3V. NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VDD +0.3V for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > VDD + 0.3V. 3. Ambient Temperature Under DC Bias. No AC Conditions. Chip deselect. NOTES: 1. This is the parameter TA. This is the "instant on" case temperature. Grade Ambient Temperature(2) GND VDD Commercial 0OC to +70OC0V 3.3V + 0.3V Industrial -40OC to +85OC0V 3.3V + 0.3V 4859 tbl 04 Symbol Parameter Min. Typ. Max. Unit VDD Supply Voltage 3.0 3.3 3.6 V VSS Ground 0 0 0 V VIH Input High Voltage 2.0 ____ VDD+0.3V(2) V VIL Input Low Voltage -0.3(1) ____ 0.8 V 4859 tbl 05 Symbol Rating Commercial & Industrial Unit VTERM(2) Terminal Voltage with Respect to GND -0.5 to +4.6 V TBIAS(3) Temperature Under Bias -55 to +125 o C TSTG Storage Temperature -65 to +150 o C TJN Junction Temperature +150 o C IOUT DC Output Current 50 mA 4859 tbl 06 Symbol Parameter Conditions(2) Max. Unit CIN Input Capacitance VIN = 3dV 9 pF COUT(3) Output Capacitance VOUT = 3dV 10 pF 4859 tbl 07 Symbol Parameter Test Conditions 70V9199/099L Unit Min. Max. |ILI| Input Leakage Current(1) VDD = 3.6V, VIN = 0V to VDD ___ 5µA |ILO| Output Leakage Current CE = VIH or CE1 = VIL, VOUT = 0V to VDD ___ 5µA VOL Output Low Voltage IOL = +4mA ___ 0.4 V VOH Output High Voltage IOH = -4mA 2.4 ___ V 4859 tbl 08 |
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