IC61LV2568

2

Integrated Circuit Solution, Inc.

AHSR023-0A

09/12/2001

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors

which may appear in this publication. © Copyright 2000, Integrated Circuit Solution, Inc.

FEATURES

• High-speed access times:

— 8, 10, 12 and 15 ns

• High-preformance, lower-power CMOS process

• Multiple center power and ground pins for

greater noise immunity

• Easy memory expansion with

CE and OE

options

•

CE power-down

• CMOS power: 540 mW @ 10 ns

36 mW standby mode

• TTL compatible inputs and outputs

• Single 3.3V

± 10% power supply

• Packages available:

— 36-pin 400mil SOJ

— 44-pin TSOP-2

DESCRIPTION

The

262,144-word by 8-bit COMS static RAM. The IC61LV2568 is

fabricated using

This highly reliable process coupled with innovative circuit

design techniques, yields higher preformance and low power

consumotion devices.

When

CE is HIGH (deselected), the device assumes a standby

mode at which the power dissipation can be reduced down to

36 mW (max.) with CMOS input levels.

The IC61LV2568 operates from a single 3.3V power supply and

all inputs are TTL-compatible.

The IC61LV2568 is available in 36-pin, 400mil SOJ and 44-pin

TSOP-2 package.

256K x 8 HIGH-SPEED CMOS STATIC RAM

FUNCTIONAL BLOCK DIAGRAM

A0-A17

CE

OE

WE

256K X 8

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

VCC

I/O

DATA

CIRCUIT

I/O0-I/O7