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T431616C-6S Datasheet(PDF) 5 Page - Taiwan Memory Technology |
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T431616C-6S Datasheet(HTML) 5 Page - Taiwan Memory Technology |
5 / 30 page TE CH tm T431616C TM Technology Inc. reserves the right P. 5 Publication Date: AUG. 2004 to change products or specifications without notice. Revision: A ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on Any Pin Relative To Vss VIN,VOUT -1.0 to 4.6 V Supply Voltage Relative To Vss VDD,VDDQ -1.0 to 4.6 V Short circuit Output Current Iout 50 mA Power Dissipation PD 1 W Operating Temperature TOPR 0 to +70 °C Storage Temperature Tstg -55 to +125 °C Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. RECOMMENDED DC OPERATING CONDITIONS (TA = 0 to +70 °°°°C, Voltage referenced to VSS=0V) Parameter Symbol Min. Typ Max. Unit Notes Supply Voltage VDD,VDDQ 3.0 3.3 3.6 V Input High Voltage VIH 2.0 3.0 VDD+0.3V V 1 Input Low Voltage VIL -0.3 0 0.8 V 2 Output logic high voltage VOH 2.4 - - V IOH=-2mA Output logic low voltage VOL - - 0.4 V IOL=2mA Input leakage current IIL -5 - 5 uA 3 Output leakage current IOL -5 - 5 uA 4 Note : 1. VIH (max) = 4.6V AC for pulse width ≤ 10ns acceptable. 2. VIL (min) = -1.0V AC for pulse width ≤ 10ns acceptable. 3. Any input 0V ≤ VIN ≤ VDD+ 0.3V , all other pin are not under test = 0V. 4. Dout = disable, 0V ≤ VOUT ≤ VDD . CAPACITANCE (TA =25 °C,VDD=3.3V, f = 1MHz) Pin Symbol Min Max Unit CLOCK CCLK 2.5 4.0 pF ADDRESS CADD 2.5 4.0 pF DQ0 ~ DQ15 COUT 3.0 5.0 pF RAS,CAS,WE,CS,CKE,LDQM, UDQM CIN 2.5 4.0 pF |
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