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BB504M Datasheet(PDF) 3 Page - Renesas Technology Corp |
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BB504M Datasheet(HTML) 3 Page - Renesas Technology Corp |
3 / 10 page BB504M Rev.7.00 Aug 10, 2005 page 3 of 9 Test Circuits • DC Biasing Circuit for Operating Characteristics Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG) Gate 1 Source Drain Gate 2 RG A ID VG2 VG1 • 200 MHz Power Gain, Noise Figure Test Circuit VG2 Input(50 Ω) 1000p 36p 1000p L1 VD = VG1 RG BBFET RFC Output(50 Ω) L2 1000p 10p max 1000p 1000p 47k 1SV70 1000p 1000p 1000p 47k 47k 120k VT VT Unit Resistance ( Ω) Capacitance (F) 1SV70 L1 : Φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns L2 : Φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns RFC : Φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns |
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