1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

One Watt Darlington Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

MPSW45

MPSW45A

Unit

Collector – Emitter Voltage

VCES

40

50

Vdc

Collector – Base Voltage

VCBO

50

60

Vdc

Emitter – Base Voltage

VEBO

12

12

Vdc

Collector Current — Continuous

IC

1.0

1.0

Adc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

1.0

8.0

Watts

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

2.5

20

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

125

°C/W

Thermal Resistance, Junction to Case

RqJC

50

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = 100 µAdc, VBE = 0)

MPSW45

MPSW45A

V(BR)CES

40

50

—

—

Vdc

Collector – Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

MPSW45

MPSW45A

V(BR)CBO

50

60

—

—

Vdc

Emitter – Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

12

—

Vdc

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

MPSW45

(VCB = 40 Vdc, IE = 0)

MPSW45A

ICBO

—

—

100

100

nAdc

Emitter Cutoff Current

(VEB = 10 Vdc, IC = 0)

IEBO

—

100

nAdc

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MPSW45/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MPSW45

MPSW45A

CASE 29–05, STYLE 1

TO–92 (TO–226AE)

1

2

3

*

*Motorola Preferred Device

COLLECTOR 3

BASE

2

EMITTER 1