K4N51163QC-ZC25 datasheet(2/64 Pages) SAMSUNG

Part #	K4N51163QC-ZC25

Description	512Mbit gDDR2 SDRAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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Rev 1.5 Oct. 2005

512M gDDR2 SDRAM

K4N51163QC-ZC

Revision History

Revision

Month

Year

History

1.0

April

2005

- First Released.

1.1

April

2005

- Corrected typo.

1.2

May

2005

- Changed speed bin organization.

(K4N56163QF-GC2A/K4N56163QF-GC33/K4N56163QF-GC36)

- 533 Speed bin changed into 550 speed bin.

- 600 speed bin is added.

- 667 speed bin changed into 700 speed bin.

1.3

Jun

2005

- Corrected typo.

- Seperaed gDDR2 device operation & timing.

1.4

September

2005

- Corrected typo.

1.5

October

2005

- Added gDDR2-800 SPEC

- Revised the IDD current values.

- Corrected typo.

- Merged Device operation and timing diagram according to customer request

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K4N51163QC-ZC25 Datasheet(PDF) 2 Page - Samsung semiconductor

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