ZXTP2009Z datasheet(4/6 Pages) ZETEX

Part #	ZXTP2009Z

Description	40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89

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Manufacturer	ZETEX [Zetex Semiconductors]

Direct Link	http://www.diodes.com/

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ZXTP2009Z

SEMICO NDUC TORS

ISSUE 1 - JUNE 2005

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

Collector-base breakdown voltage

BVCBO

-50

-90

V

IC=-100 A

Collector-emitter breakdown voltage

BVCES

-50

-90

V

IC=-100 A

Collector-emitter breakdown voltage

BVCEO

-40

-58

V

IC=-10mA*

Emitter-base breakdown voltage

BVEBO

-7.5

-8.3

V

IE=-100 A

Collector cut-off current

ICBO

1

-20

nA

VCB=-40V

Collector cut-off current

ICES

1

-20

nA

VCB=-32V

Emitter cut-off current

IEBO

1

-20

nA

VEB=-6V

Collector-emitter saturation voltage

VCE(SAT)

-15

-44

-50

-120

-70

-125

-130

-162

-30

-60

-70

-165

-80

-175

-185

mV

IC=-0.1A, IB=-10mA*

I

C=-1A, IB=-100mA*

I

C=-1A, IB=-50mA*

I

C=-1A, IB=-10mA*

I

C=-2A, IB=-200mA*

I

C=-2A, IB=-40mA*

I

C=-3.5A, IB=-175mA*

I

C=-5.5A, IB=-550mA*

Base-emitter saturation voltage

VBE(SAT)

-820

-1000

-900

-1075

mV

IC=-2A, IB=-40mA*

I

C=-5.5A, IB=-550mA*

Base-emitter turn-on voltage

VBE(ON)

-778

-869

-850

-950

mV

IC=-2A, VCE=-2V*

I

C=-5.5A, VCE=-2V*

Static forward current transfer ratio

HFE

200

170

110

390

350

290

175

550

IC=-10mA, VCE=-2V*

I

C=-0.5A, VCE=-2V*

I

C=-2A, VCE=-2V*

I

C=-5.5A, VCE=-2V*

Transition frequency

fT

152

MHz IC=-50mA, VCE=-10V

f=100MHz

Output capacitance

COBO

53

pF

VCB=-10V, f=1MHz*

Switching times

td

tr

ts

tr

18

17

325

60

ns

IC=-1A, VCC=-10V,

IB1=IB2=-100mA

Switching times

td

tr

ts

tr

55

107

264

103

ns

IC=-2A, VCC=-30V,

IB1=IB2=-20mA

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

* Measured under pulsed conditions. Pulse width

300 s; duty cycle

2%.

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