MUN5114T1 datasheet(10/10 Pages) ONSEMI

Part #	MUN5114T1

Description	PNP SILICON BIAS RESISTOR TRANSISTOR

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Manufacturer	ONSEMI [ON Semiconductor]

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MUN5111T1 Series

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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136T1

75

°C

25

°C

−25

°C

Figure 28. Maximum Collector Voltage versus

Collector Current

Figure 29. DC Current Gain

Figure 30. Output Capacitance

Figure 31. Output Current versus Input Voltage

Vin, INPUT VOLTAGE (VOLTS)

VR, REVERSE BIAS VOLTAGE (VOLTS)

Figure 32. Input Voltage versus Output Current

IC, COLLECTOR CURRENT (mA)

1

0.1

7

6

5

4

3

2

1

0

IC, COLLECTOR CURRENT (mA)

100

10

1

100

10

1

0.01

1000

1.2

0.6

60

50

40

30

20

10

0

0.2

0.4

0.8

1.0

100

6

5

4

3

2

1

0

0.1

1

10

9

8

7

100

12

10

8

6

4

2

0

1

10

18

16

14

20

IC/IB = 10

75

°C

25

°C

TA = −25°C

VCE = 10 V

75

°C

25

°C

TA = −25°C

VO = 5 V

VO = 0.2 V

75

°C

25

°C

TA = −25°C

f = 1 MHz

IE = 0 V

TA = 25°C

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