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IXFN44N50U3 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXFN44N50U3 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 5 page 2 - 5 © 2000 IXYS All rights reserved M4 screws (4x) supplied Dim. Millimeter Inches Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 miniBLOC, SOT-227 B Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. V DSS V GS = 0 V, ID = 1 mA 500 V V GS(th) V DS = V GS, ID = 8 mA 2 4 V I GSS V GS = ±20 VDC, VDS = 0 ±200 nA I DSS V DS = 0.8 V DSS T J = 25°C 400 mA V GS = 0 V T J = 125°C2 mA R DS(on) V GS = 10 V, ID = 0.5 ID25 44N50 0.12 W 48N50 0.10 W Pulse test, t £ 300 ms, duty cycle d £ 2 % Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. g fs V DS = 10 V, I D = 0.5 ID25, pulse test 22 42 S C iss 8400 pF C oss V GS = 0 V, V DS = 25 V, f = 1 MHz 900 pF C rss 280 pF t d(on) 30 ns t r V GS = 10 V, V DS = 0.5 VDSS, ID = 0.5 ID25 60 ns t d(off) R G = 1 W (External) 100 ns t f 30 ns Q g(on) 270 nC Q gs V GS = 10 V, V DS = 0.5 VDSS, ID = 0.5 ID25 60 nC Q gd 135 nC R thJC 0.24 K/W R thCK 0.05 K/W Ultra-fast Diode Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. I R T J= 25°C; V R= VRRM 200 mA V R= 0.8VRRM 100 mA T J= 125°C; VR= 0.8VRRM 14 mA V F I F = 70A, VGS = 0 V, TJ= 150°C 1.5 V Pulse test, t £ 300 ms, duty cycle d £ 2 % T J= 25°C 1.8 V t rr I I = 1A, di/dt = -200 A/ms, VR = 30 V, TJ = 25°C35 50 ns I RM I F= 60A, di/dt = -480 A/ms, VR = 350 V, TJ = 100°C 19 21 A R thJC 0.7 K/W R thJK 0.05 K/W IXFN44N50U2 IXFN48N50U2 IXFN44N50U3 IXFN48N50U3 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 |
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