IXFN44N50U3 datasheet(2/5 Pages) IXYS

Part #	IXFN44N50U3

Description	HiPerFET Power MOSFETs

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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2 / 5 page

2 - 5

M4 screws (4x) supplied

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

31.50

31.88

1.240

1.255

B

7.80

8.20

0.307

0.323

C

4.09

4.29

0.161

0.169

D

4.09

4.29

0.161

0.169

E

4.09

4.29

0.161

0.169

F

14.91

15.11

0.587

0.595

G

30.12

30.30

1.186

1.193

H

38.00

38.23

1.496

1.505

J

11.68

12.22

0.460

0.481

K

8.92

9.60

0.351

0.378

L

0.76

0.84

0.030

0.033

M

12.60

12.85

0.496

0.506

N

25.15

25.42

0.990

1.001

O

1.98

2.13

0.078

0.084

P

4.95

5.97

0.195

0.235

Q

26.54

26.90

1.045

1.059

R

3.94

4.42

0.155

0.174

S

4.72

4.85

0.186

0.191

T

24.59

25.07

0.968

0.987

U

-0.05

0.1

-0.002

0.004

miniBLOC, SOT-227 B

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 1 mA

500

V

GS(th)

V

DS

= V

GS, ID = 8 mA

2

4

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±200

nA

I

DSS

V

DS

= 0.8 V

DSS

T

J = 25°C

400

mA

V

GS = 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

44N50

0.12

W

48N50

0.10

W

Pulse test, t

£ 300 ms, duty cycle d £ 2 %

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

g

fs

V

DS

= 10 V, I

D = 0.5 ID25, pulse test

22

42

S

C

iss

8400

pF

C

oss

V

GS

= 0 V, V

DS = 25 V, f = 1 MHz

900

pF

C

rss

280

pF

t

d(on)

30

ns

t

r

V

GS

= 10 V, V

DS = 0.5 VDSS, ID = 0.5 ID25

60

ns

t

d(off)

R

G = 1 W (External)

100

ns

t

f

30

ns

Q

g(on)

270

nC

Q

gs

V

GS

= 10 V, V

DS = 0.5 VDSS, ID = 0.5 ID25

60

nC

Q

gd

135

nC

R

thJC

0.24

K/W

R

thCK

0.05

K/W

Ultra-fast Diode

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Symbol

Test Conditions

min.

typ.

max.

I

R

T

J= 25°C;

V

R= VRRM

200

mA

V

R= 0.8VRRM

100

mA

T

J= 125°C; VR= 0.8VRRM

14

mA

V

F

I

F = 70A, VGS = 0 V, TJ= 150°C

1.5

V

Pulse test, t

£ 300 ms, duty cycle d £ 2 % T

J= 25°C

1.8

V

t

rr

I

I = 1A, di/dt = -200 A/ms, VR = 30 V, TJ = 25°C35

50

ns

I

RM

I

F= 60A, di/dt = -480 A/ms, VR = 350 V, TJ = 100°C

19

21

A

R

thJC

0.7

K/W

R

thJK

0.05

K/W

IXFN44N50U2

IXFN48N50U2

IXFN44N50U3

IXFN48N50U3

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

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