IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH24N60AU1

IXGH24N60AU1S

Pulse Width - seconds

0.0001

0.001

0.01

0.1

1

10

0.01

0.1

1

D=0.1

D=0.2

D=0.5

V

0

100

200

300

400

500

600

0.01

0.1

1

10

100

Q

0

25

50

75

100

0

3

6

9

12

15

I

V

0

20

40

60

80

100

120

0

1

2

3

4

5

0

100

200

300

400

500

E

off

t

fi

I

0

102030

4050

0

1

2

3

4

5

0

100

200

300

400

500

E

off

t

fi

T

R

T

I

T

R

D=0.05

D=0.02

Single Pulse

D=0.01

G24N60P2.JNB

D = Duty Cycle

Fig.11 Transient Thermal Impedance

Fig.9 Gate Charge Characteristic Curve

Fig.10 Turn-Off Safe Operating Area

Fig.7 Turn-Off Energy per Pulse and

Fig.8 Dependence of Turn-Off Energy

Fall Time on Collector Current

Per Pulse and Fall Time on R

G

dV/dt < 3V/ns