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IXGH24N60AU1S Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXGH24N60AU1S
Description  HiPerFAST IGBT with Diode
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGH24N60AU1S Datasheet(HTML) 1 Page - IXYS Corporation

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©1997 IXYS Corporation. All rights reserved.
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
°C to 150°C
600
V
V
CGR
T
J
= 25
°C to 150°C; R
GE = 1 MΩ
600
V
V
GES
Continuous
±20
V
V
GEM
Transient
±30
V
I
C25
T
C = 25°C48
A
I
C90
T
C = 90°C24
A
I
CM
T
C = 25°C, 1 ms
96
A
SSOA
V
GE = 15 V, TVJ = 125°C, RG = 22 Ω
I
CM = 48
A
(RBSOA)
Clamped inductive load, L = 100
µH
@ 0.8 V
CES
P
C
T
C = 25°C
150
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
Maximum Lead and Tab temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque, TO-247 AD
1.13/10 Nm/lb.in.
Weight
TO-247 SMD
4
g
TO-247 AD
6
g
Features
l
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
l
IGBT and anti-parallel FRED in one
package
l
2nd generation HDMOSTM process
l
Low V
CE(sat)
- for minimum on-state conduction
losses
l
MOS Gate turn-on
- drive simplicity
l
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Space savings (two devices in one
package)
l
Easy to mount with 1 screw, TO-247
(isolated mounting screw hole)
l
Reduces assembly time and cost
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 750
µA, V
GE = 0 V
600
V
V
GE(th)
I
C
= 250
µA, V
CE = VGE
2.5
5.5
V
I
CES
V
CE = 0.8 • VCES
T
J = 25°C
500
µA
V
GE = 0 V
T
J = 125°C8
mA
I
GES
V
CE = 0 V, VGE = ±20 V
±100 nA
V
CE(sat)
I
C
= I
C90 , VGE = 15 V
2.7
V
G
C
E
TO-247 AD
(24N60AU1)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
C (TAB)
G
E
C (TAB)
TO-247 SMD
(24N60AU1S)
V
CES
=
600 V
I
C25
=
48 A
V
CE(sat)
=
2.7 V
t
fi
= 275 ns
HiPerFASTTM
IGBT with Diode
Combi Pack
IXGH 24N60AU1
IXGH 24N60AU1S
92717H (3/97)


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