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IXGH24N60AU1S Datasheet(PDF) 1 Page - IXYS Corporation |
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IXGH24N60AU1S Datasheet(HTML) 1 Page - IXYS Corporation |
1 / 6 page ©1997 IXYS Corporation. All rights reserved. Symbol Test Conditions Maximum Ratings V CES T J = 25 °C to 150°C 600 V V CGR T J = 25 °C to 150°C; R GE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25°C48 A I C90 T C = 90°C24 A I CM T C = 25°C, 1 ms 96 A SSOA V GE = 15 V, TVJ = 125°C, RG = 22 Ω I CM = 48 A (RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V CES P C T C = 25°C 150 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C Maximum Lead and Tab temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s M d Mounting torque, TO-247 AD 1.13/10 Nm/lb.in. Weight TO-247 SMD 4 g TO-247 AD 6 g Features l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD l IGBT and anti-parallel FRED in one package l 2nd generation HDMOSTM process l Low V CE(sat) - for minimum on-state conduction losses l MOS Gate turn-on - drive simplicity l Fast Recovery Epitaxial Diode (FRED) - soft recovery with low I RM Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switch-mode and resonant-mode power supplies Advantages l Space savings (two devices in one package) l Easy to mount with 1 screw, TO-247 (isolated mounting screw hole) l Reduces assembly time and cost Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. BV CES I C = 750 µA, V GE = 0 V 600 V V GE(th) I C = 250 µA, V CE = VGE 2.5 5.5 V I CES V CE = 0.8 • VCES T J = 25°C 500 µA V GE = 0 V T J = 125°C8 mA I GES V CE = 0 V, VGE = ±20 V ±100 nA V CE(sat) I C = I C90 , VGE = 15 V 2.7 V G C E TO-247 AD (24N60AU1) G = Gate, C = Collector, E = Emitter, TAB = Collector C (TAB) G E C (TAB) TO-247 SMD (24N60AU1S) V CES = 600 V I C25 = 48 A V CE(sat) = 2.7 V t fi = 275 ns HiPerFASTTM IGBT with Diode Combi Pack IXGH 24N60AU1 IXGH 24N60AU1S 92717H (3/97) |
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