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IXGH32N50BU1 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXGH32N50BU1 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 2 page IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXYS reserves the right to change limits, test conditions, and dimensions. IXGH32N50BU1 IXGH32N50BU1S Symbol Test Conditions Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. g fs I C = I C90; VCE = 10 V, 15 20 S Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % C ies 2500 pF C oes V CE = 25 V, VGE = 0 V, f = 1 MHz 270 pF C res 70 pF Q g 125 150 nC Q ge I C = IC90, VGE = 15 V, VCE = 0.5 VCES 23 35 nC Q gc 50 75 nC t d(on) 25 ns t ri 30 ns t d(off) 100 200 ns t fi 80 150 ns E off 0.7 1.5 mJ t d(on) 25 ns t ri 35 ns E on 1mJ t d(off) 120 ns t fi 120 ns E off 1.2 mJ R thJC 0.62 K/W R thCK 0.25 K/W Reverse Diode (FRED) Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. max. V F I F = IC90 , VGE = 0 V, 1.6 V Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % I RM I F = IC90, VGE = 0 V, -diF/dt = 240 A/µs10 15 A t rr V R = 360 V T J =125°C 150 ns I F = 1 A; -di/dt = 100 A/µs; VR = 30 V T J =25°C35 50 ns R thJC 1 K/W Inductive load, T J = 25° °°°°C I C = IC90, VGE = 15 V, L = 100 µH, V CE = 0.8 V CES, RG = Roff = 4.7 Ω Remarks: Switching times may increase for V CE (Clamp) > 0.8 • VCES, higher T J or increased RG Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 1 2.2 2.54 .087 .102 A 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC e ∅ P Inductive load, T J = 125° °°°°C I C = IC90, VGE = 15 V, L = 100 µH V CE = 0.8 VCES, RG = Roff = 4.7 Ω Remarks: Switching times may increase for V CE (Clamp) > 0.8 • VCES, higher T J or increased RG Min. Recommended Footprint (Dimensions in inches and (mm)) TO-247 AD Outline 1. Gate 2. Collector 3. Emitter 4. Collector Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A1 2.29 2.54 .090 .100 A2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b1 1.91 2.13 .075 .084 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 4.90 5.10 .193 .201 L1 2.70 2.90 .106 .114 L2 2.10 2.30 .083 .091 L3 0.00 0.10 .00 .004 L4 1.90 2.10 .075 .083 ØP 3.55 3.65 .140 .144 Q 5.59 6.20 .220 .244 R 4.32 4.83 .170 .190 S 6.15 BSC .242 BSC TO-247 SMD Outline |
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