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IXGH32N50BU1 Datasheet(PDF) 2 Page - IXYS Corporation

Part # IXGH32N50BU1
Description  HiPerFAST IGBT with Diode Combi Pack
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGH32N50BU1 Datasheet(HTML) 2 Page - IXYS Corporation

  IXGH32N50BU1 Datasheet HTML 1Page - IXYS Corporation IXGH32N50BU1 Datasheet HTML 2Page - IXYS Corporation  
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IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH32N50BU1
IXGH32N50BU1S
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90; VCE = 10 V,
15
20
S
Pulse test, t
≤ 300 µs, duty cycle ≤ 2 %
C
ies
2500
pF
C
oes
V
CE = 25 V, VGE = 0 V, f = 1 MHz
270
pF
C
res
70
pF
Q
g
125
150
nC
Q
ge
I
C = IC90, VGE = 15 V, VCE = 0.5 VCES
23
35
nC
Q
gc
50
75
nC
t
d(on)
25
ns
t
ri
30
ns
t
d(off)
100
200
ns
t
fi
80
150
ns
E
off
0.7
1.5
mJ
t
d(on)
25
ns
t
ri
35
ns
E
on
1mJ
t
d(off)
120
ns
t
fi
120
ns
E
off
1.2
mJ
R
thJC
0.62 K/W
R
thCK
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F = IC90 , VGE = 0 V,
1.6
V
Pulse test, t
≤ 300 µs, duty cycle d ≤ 2 %
I
RM
I
F = IC90, VGE = 0 V, -diF/dt = 240 A/µs10
15
A
t
rr
V
R = 360 V
T
J =125°C
150
ns
I
F = 1 A; -di/dt = 100 A/µs; VR = 30 V
T
J =25°C35
50
ns
R
thJC
1 K/W
Inductive load, T
J = 25°
°°°°C
I
C = IC90, VGE = 15 V, L = 100 µH,
V
CE = 0.8 V CES, RG = Roff = 4.7 Ω
Remarks: Switching times may
increase for V
CE (Clamp) > 0.8 • VCES,
higher T
J or increased RG
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
∅P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
e
∅ P
Inductive load, T
J = 125°
°°°°C
I
C = IC90, VGE = 15 V, L = 100 µH
V
CE = 0.8 VCES, RG = Roff = 4.7 Ω
Remarks: Switching times may
increase for V
CE (Clamp) > 0.8 • VCES,
higher T
J or increased RG
Min. Recommended Footprint
(Dimensions in inches and (mm))
TO-247 AD Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.83
5.21
.190
.205
A1
2.29
2.54
.090
.100
A2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b1
1.91
2.13
.075
.084
C
0.61
0.80
.024
.031
D
20.80
21.34
.819
.840
E
15.75
16.13
.620
.635
e
5.45
BSC
.215
BSC
L
4.90
5.10
.193
.201
L1
2.70
2.90
.106
.114
L2
2.10
2.30
.083
.091
L3
0.00
0.10
.00
.004
L4
1.90
2.10
.075
.083
ØP
3.55
3.65
.140
.144
Q
5.59
6.20
.220
.244
R
4.32
4.83
.170
.190
S
6.15
BSC
.242
BSC
TO-247 SMD Outline


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