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IXGH25N100 Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXGH25N100
Description  Low VCE(sat), High speed IGBT
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGH25N100 Datasheet(HTML) 1 Page - IXYS Corporation

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© 1996 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
°C to 150°C
1000
V
V
CGR
T
J
= 25
°C to 150°C; R
GE = 1 MΩ
1000
V
V
GES
Continuous
±20
V
V
GEM
Transient
±30
V
I
C25
T
C = 25°C50
A
I
C90
T
C = 90°C25
A
I
CM
T
C = 25°C, 1 ms
100
A
SSOA
V
GE = 15 V, TVJ = 125°C, RG = 33 Ω
I
CM = 50
A
(RBSOA)
Clamped inductive load, L = 100
µH
@ 0.8 V
CES
P
C
T
C = 25°C
200
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
M
d
Mounting torque (M3)
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 3 mA, V
GE = 0 V
1000
V
V
GE(th)
I
C
= 250
µA, V
CE = VGE
2.5
5
V
I
CES
V
CE = 0.8 • VCES
T
J = 25°C
250
µA
V
GE = 0 V
T
J = 125°C1
mA
I
GES
V
CE = 0 V, VGE = ±20 V
±100 nA
V
CE(sat)
I
C
= I
C90, VGE = 15 V
25N100
3.5
V
25N100A
4.0
V
TO-247 AD (IXGH)
G
C
E
TO-204 AE (IXGM)
C
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
V
CES
I
C25
V
CE(sat)
Low V
CE(sat)
IXGH/IXGM 25 N100
1000 V
50 A
3.5 V
High speed IGBT
IXGH/IXGM 25 N100A 1000 V
50 A
4.0 V
Features
l
International standard packages
l
2nd generation HDMOSTM process
l
Low V
CE(sat)
- for low on-state conduction losses
l
High current handling capability
l
MOS Gate turn-on
- drive simplicity
l
Voltage rating guaranteed at high
temperature (125
°C)
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
High power density
91516E (3/96)


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