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IXGH25N100A Datasheet(PDF) 4 Page - IXYS Corporation |
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IXGH25N100A Datasheet(HTML) 4 Page - IXYS Corporation |
4 / 4 page IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXYS reserves the right to change limits, test conditions, and dimensions. IXGH 25N100 IXGM 25N100 IXGH 25N100A IXGM 25N100A V CE - Volts 0 5 10 15 20 25 0 400 800 1200 1600 2000 2400 C res Gate Charge - nCoulombs 0 255075 100 125 150 1 3 5 7 9 11 13 15 V CE - Volts 0 200 400 600 800 1000 0.01 0.1 1 10 100 Pulse Width - Seconds 0.0001 0.001 0.01 0.1 1 10 0.01 0.1 1 Single Pulse D=0.2 D=0.5 D = Duty Cycle V CE = 800V I C = 25A I G = 10mA T J = 125°C dV/dt < 3V/ns C oes C ies f = 1MHz D=0.1 D=0.05 D=0.02 D=0.01 25N100g2.JNB Fig.10 Transient Thermal Impedance Fig.9 Capacitance Curves Fig.7 Gate Charge Fig.8 Turn-Off Safe Operating Area |
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Similar Description - IXGH25N100A |
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