IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 25N100

IXGM 25N100

IXGH 25N100A

IXGM 25N100A

V

0

5

10

15

20

25

0

400

800

1200

1600

2000

2400

C

res

Gate Charge - nCoulombs

0

255075

100

125

150

1

3

5

7

9

11

13

15

V

0

200

400

600

800

1000

0.01

0.1

1

10

100

Pulse Width - Seconds

0.0001

0.001

0.01

0.1

1

10

0.01

0.1

1

Single Pulse

D=0.2

D=0.5

D = Duty Cycle

V

I

I

T

dV/dt < 3V/ns

C

oes

C

ies

f = 1MHz

D=0.1

D=0.05

D=0.02

D=0.01

25N100g2.JNB

Fig.10 Transient Thermal Impedance

Fig.9 Capacitance Curves

Fig.7 Gate Charge

Fig.8 Turn-Off Safe Operating Area