P2N2222AG datasheet(4/6 Pages) ONSEMI

Part #	P2N2222AG

Description	Amplifier Transistors(NPN Silicon)

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P2N2222A

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4

1.0

0.8

0.6

0.4

0.2

0

0.005

0.01

0.02 0.03

0.05

0.1

0.2 0.3

0.5

1.0

2.0

3.0

5.0

10

20

30

50

IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

TJ =25°C

IC =1.0 mA

10 mA

150 mA

500 mA

Figure 5. Turn--On Time

IC, COLLECTOR CURRENT (mA)

70

100

200

50

10

20

70

5.0

100

5.0 7.0

30

50

200

10

30

7.0

20

IC/IB =10

TJ =25°C

tr @VCC =30V

td @VEB(off) =2.0 V

td @VEB(off) =0

3.0

2.0

300

500

5.0

7.0

10

20

30

50

70

100

200

300

Figure 6. Turn--Off Time

IC, COLLECTOR CURRENT (mA)

10

20

70 100

5.0 7.0

30

50

200 300

500

VCC =30V

IC/IB =10

IB1 =IB2

TJ =25°C

t′s =ts -- 1/8 tf

tf

Figure 7. Frequency Effects

f, FREQUENCY (kHz)

4.0

6.0

8.0

10

2.0

0.1

Figure 8. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

1.0 2.0

5.0 10 20

50

0.2

0.5

0

100

0.01 0.02 0.05

RS =OPTIMUM

RS = SOURCE

RS = RESISTANCE

IC =1.0 mA,RS = 150 Ω

500 mA, RS = 200 Ω

100 mA, RS =2.0 kΩ

50 mA, RS =4.0 kΩ

f=1.0 kHz

IC =50 mA

100 mA

500 mA

1.0 mA

4.0

6.0

8.0

10

2.0

0

50 100 200

500 1.0 k 2.0 k

5.0 k 10 k 20 k

50 k 100 k

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