© Semiconductor Components Industries, LLC, 2003

December, 2003 − Rev. 5

1

Publication Order Number:

MUN5211DW1T1/D

MUN5211DW1T1 Series

Preferred Devices

Dual Bias Resistor

Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the MUN5211DW1T1 series,

two BRT devices are housed in the SOT−363 package which is ideal

for low power surface mount applications where board space is at a

premium.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Base Voltage

50

Vdc

Collector-Emitter Voltage

50

Vdc

Collector Current

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation

Derate above 25

°C

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

mW

mW/

°C

Thermal Resistance −

Junction-to-Ambient

670 (Note 1.)

490 (Note 2.)

°C/W

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

Total Device Dissipation

Derate above 25

°C

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

mW

mW/

°C

Thermal Resistance −

Junction-to-Ambient

493 (Note 1.)

325 (Note 2.)

°C/W

Thermal Resistance −

Junction-to-Lead

188 (Note 1.)

208 (Note 2.)

°C/W

Junction and Storage Temperature

− 55 to +150

°C

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

Preferred devices are recommended choices for future use

and best overall value.

DEVICE MARKING INFORMATION

See specific marking information in the device marking table

on page 2 of this data sheet.

(1)

(2)

(3)

(4)

(5)

(6)

http://onsemi.com

SOT−363

CASE 419B

STYLE 1

MARKING DIAGRAM

1

6

XX = Specific Device Code

d

= Date Code

1

6