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Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Min
Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Forwand Transconductance
Gate Threshold Voltage
Static Drain-Source
On-Resistance
BVDSS
IDSS
IGSSR
IGSSF
55
1
3
-100
100
1
m
Ω
V
nA
nA
µ
A
V
S
6 - 31
Gate Body Leakage Current, Reverse
On Characteristics b
Dynamic Characteristics c
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Characteristics c
Turn-On Delay Time
Turn-On Fall Time
Turn-Off Delay Time
Turn-On Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
Test Condition
VGS = 0V, ID = 250µA
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
IS
VSD
Typ
Max
60
VDS = 55V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10 V, ID = 20A
VDS = 10 V, ID = 20A
VDD = 30V, ID = 1A,
VGS = 10V, RGEN =6Ω
VDS = 30V, ID = 15A,
VGS = 10V
VDS = 25V, VGS = 0V,
f = 1.0 MHz
VGS = 0V, IS = 15A
890
173
21
12
7
34
9
25
20
65
30
19
2.8
3.6
25
20
1.3
9
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
42
75
m
Ω
VGS = 4.5V, ID = 15A
55
CED20N06/CEU20N06
6
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.