AF4409PL datasheet(2/3 Pages) ANACHIP

Part #	AF4409PL

Description	P-Channel 30-V (D-S) MOSFET

Download	3 Pages

Scroll/Zoom	100%

Manufacturer	ANACHIP [Anachip Corp]

Direct Link

Logo

2 / 3 page

AF4409P

P-Channel 30-V (D-S) MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Jul 16, 2004

2/3

Absolute Maximum Ratings (T

A=25ºC unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-30

V

VGS

Gate-Source Voltage

±12

V

TA=25ºC

10

ID

Continuous Drain Current (Note 1)

TA=70ºC

8.2

A

IDM

Pulsed Drain Current (Note 2)

±50

A

IS

Continuous Source Current (Diode Conduction) (Note 1)

-2.1

A

TA=25ºC

3.1

PD

Power Dissipation (Note 1)

TA=70ºC

2

W

TJ, TSTG

Operating Junction and Storage Temperature Range

-55 to 150

ºC

Thermal Resistance Ratings

Symbol

Parameter

Maximum

Units

RθJC

Maximum Junction-to-Case (Note 1)

t < 5 sec

25

ºC/W

RθJA

Maximum Junction-to-Ambient (Note 1)

t < 10 sec

40

ºC/W

Note 1: surface Mounted on 1”x 1” FR4 Board.

Note 2: Pulse width limited by maximum junction temperature

Specifications (T

A=25ºC unless otherwise noted)

Limits

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Static

V(BR)DSS

Drain-Source breakdown Voltage

VGS=0V, ID=-250uA

-30

-

V

VGS(th)

Gate-Threshold Voltage

VDS= VGS, ID=-250uA

-1

-1.6

-3

V

IGSS

Gate-Body Leakage

VDS=0V, VGS=±12V

-

±100

nA

VDS=-20V, VGS=0V

-

-1

IDSS

Zero Gate Voltage Drain Current

VDS=-20V, VGS=0V,

TJ=55ºC

-

-5

uA

ID(on)

On-State Drain Current (Note 3)

VDS=-5V, VGS=-10V

-50

-

A

VGS=-4.5V, ID=-10A

-

16.5

20

VGS=-2.5V, ID=-8.4A

-

25

29

rDS(on)

Drain-Source On-Resistance (Note 3)

VGS=-4.5V, ID=-10A,

TJ=55ºC

-

18

23

mΩ

gfs

Forward Tranconductance (Note 3)

VGS=-15V, ID=-9.5A

-

31

-

S

VSD

Diode Forward Voltage

IS=-2.1A, VGS=0V

-

-0.7

-1.2

V

Dynamic (Note 4)

Qg

Total Gate Charge

-

15

26

Qgs

Gate-Source Charge

-

5.8

-

Qgd

Gate-Drain Charge

VDS=-15V, VGS=-5V,

ID=-10A

-

12

-

nC

Switching

td(on)

Turn-On Delay Time

-

15

26

tr

Rise Time

-

12

21

td(off)

Turn-Off Delay Time

-

62

108

tf

Fall-Time

VDD=-15V, RL=15Ω,

ID=-1A, VGEN=-10V,

RG=6Ω,

-

46

71

nS

Note 3: Pulse test: PW < 300us duty cycle < 2%.

Note 4: Guaranteed by design, not subject to production testing.

Similar Part No. - AF4409PL

Manufacturer	Part #	Datasheet	Description
Anachip Corp	AF4407	263Kb / 5P	P-Channel 30-V (D-S) MOSFET
	AF4407P	263Kb / 5P	P-Channel 30-V (D-S) MOSFET
	AF4407PS	263Kb / 5P	P-Channel 30-V (D-S) MOSFET
	AF4407PSL	263Kb / 5P	P-Channel 30-V (D-S) MOSFET
	AF4407PSLA	263Kb / 5P	P-Channel 30-V (D-S) MOSFET

More results

Similar Description - AF4409PL

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SI2341DS	43Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 11-Aug-03
Vishay Siliconix	SI4835BDY	90Kb / 6P	P-Channel 30-V (D-S) MOSFET Rev. D, 25-Oct-0
Anachip Corp	AF4407	263Kb / 5P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI7423DN	173Kb / 3P	P-Channel 30-V (D-S) MOSFET 24-May-04
	SI2303ADS	39Kb / 4P	P-Channel, 30-V (D-S) MOSFET Rev. B, 29-Apr-02
	SI3481DV	67Kb / 5P	P-Channel 30-V (D-S) MOSFET Rev. B, 16-Feb-04
DinTek Semiconductor Co...	DTM4415	286Kb / 9P	P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4435DDY-T1-GE3	279Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. C, 18-May-09
	SI7121DN	552Kb / 13P	P-Channel 30-V (D-S) MOSFET Rev. C, 23-Jun-08
	SI4825DDY-T1	242Kb / 10P	P-Channel 30-V (D-S) MOSFET Rev. A, 13-Oct-08
	SI7129DN	566Kb / 13P	P-Channel 30 V (D-S) MOSFET Rev. B, 06-Sep-10

More results

AF4409PL Datasheet(PDF) 2 Page - Anachip Corp

AF4409PL Datasheet(HTML) 2 Page - Anachip Corp

Similar Part No. - AF4409PL

Similar Description - AF4409PL

Html Pages

1 2 3

Datasheet Download

Link URL