MDI200-12A4 datasheet(2/4 Pages) IXYS

Part #	MDI200-12A4

Description	IGBT Modules - Short Circuit SOA Capability Square RBSOA

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Manufacturer	IXYS [IXYS Corporation]

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MII 200-12 A4

MID 200-12 A4

MDI 200-12 A4

Symbol

Conditions

Characteristic Values

(T

J = 25

°C, unless otherwise specified)

min.

typ.

max.

V

(BR)CES

V

GE = 0 V

1200

V

GE(th)

I

C = 6 mA, VCE = VGE

4.5

6.5

V

I

CES

V

CE

= V

CES

T

J = 25

°C10 mA

T

J = 125

°C15

mA

I

GES

V

CE

= 0 V, V

GE =

±20 V

±700 nA

V

CE(sat)

I

C = 150 A, VGE = 15 V

2.2

2.7

V

C

ies

11

nF

C

oes

V

CE = 25 V, VGE = 0 V, f = 1 MHz

1.5

nF

C

res

0.65

nF

t

d(on)

100

ns

t

r

50

ns

t

d(off)

650

ns

t

f

50

ns

E

on

24.2

mJ

E

off

21

mJ

R

thJC

0.11 K/W

R

thJS

with heatsink compound

0.22

K/W

Reverse Diode (FRED)

Characteristic Values

(T

J = 25

°C, unless otherwise specified)

min.

typ.

max.

V

F

I

F = 150 A, VGE = 0 V,

2.2

2.5

V

I

F = 150 A, VGE = 0 V, TJ = 125

°C

1.8

1.9

V

I

F

T

C = 25

°C

300

A

T

C = 80

°C

200

A

I

RM

I

F = 150 A, VGE = 0 V, -diF/dt = 1200 A/

ms

125

A

t

rr

T

J = 125

°C, V

R = 600 V

200

ns

R

thJC

0.23 K/W

R

thJS

with heatsink compound

0.45

K/W

Inductive load, T

J = 125

°C

I

C = 150 A, VGE = ±15 V

V

CE = 600 V, RG = 6.8

W

Dimensions in mm (1 mm = 0.0394")

Equivalent Circuits for Simulation

Conduction

IGBT (typ. at VGE = 15 V; TJ = 125°C)

V0 = 1.5 V; R0 = 7.0 mW

Free Wheeling Diode (typ. at TJ = 125°C)

V0 = 1.3 V; R0 = 3.4 mW

Thermal Response

IGBT (typ.)

Cth1 = 0.40 J/K; Rth1 = 0.110 K/W

Cth2 = 0.93 J/K; Rth2 = 0.003 K/W

Free Wheeling Diode (typ.)

Cth1 = 0.28 J/K; Rth1 = 0.226 K/W

Cth2 = 0.51 J/K; Rth2 = 0.005 K/W

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