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IXGT15N120B Datasheet(PDF) 4 Page - IXYS Corporation |
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IXGT15N120B Datasheet(HTML) 4 Page - IXYS Corporation |
4 / 4 page IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXGH 15N120B IXGT 15N120B Pulse Width - Seconds 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 D=0.2 V CE - Volts 0 200 400 600 800 1000 1200 0.1 1 10 100 Q g - nanocoulombs 0 1020 304050 0 2 4 6 8 10 12 14 16 R G - Ohms 0 102030 4050 60 0 1 2 3 4 5 6 7 8 I C - Amperes 5 1015202530 35 0 1 2 3 4 5 6 7 8 V CE = 600V I C = 15A T J = -55 to +125°C R G = 10Ω dV/dt < 5V/ns D=0.5 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse IXGH15N120B-P2 D = Duty Cycle R G = 10Ω T J = 125°C 30 T J = 125°C I C = 15A E (OFF) I C = 7.5A I C = 30A E (OFF) E (OFF) E (OFF) Fig. 7. Dependence of tfi and E OFF on IC. Fig. 8. Dependence of tfi and E OFF on RG. Fig. 9. Gate Charge Fig. 10. Turn-off Safe Operating Area Fig.11. TransientThermalResistance |
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