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K4M56323LE-EL1H Datasheet(PDF) 10 Page - Samsung semiconductor |
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K4M56323LE-EL1H Datasheet(HTML) 10 Page - Samsung semiconductor |
10 / 12 page K4M56323LE - M(E)E/N/S/C/L/R February 2004 Mobile-SDRAM Normal MRS Mode Test Mode CAS Latency Burst Type Burst Length A8 A7 Type A6 A5 A4 Latency A3 Type A2 A1 A0 BT=0 BT=1 0 0 Mode Register Set 0 0 0 Reserved 0 Sequential 0 0 0 1 1 0 1 Reserved 0 0 1 1 1 Interleave 0 0 1 2 2 1 0 Reserved 0 1 0 2 Mode Select 0 1 0 4 4 1 1 Reserved 0 1 1 3 BA1 BA0 Mode 0 1 1 8 8 Write Burst Length 1 0 0 Reserved 0 0 Setting for Nor- mal MRS 1 0 0 Reserved Reserved A9 Length 1 0 1 Reserved 1 0 1 Reserved Reserved 0 Burst 1 1 0 Reserved 1 1 0 Reserved Reserved 1 Single Bit 1 1 1 Reserved 1 1 1 Full Page Reserved Register Programmed with Normal MRS Address BA0 ~ BA1 A11 ~ A10/AP A9*2 A8 A7 A6 A5 A4 A3 A2 A1 A0 Function "0" Setting for Normal MRS RFU*1 W.B.L Test Mode CAS Latency BT Burst Length A. MODE REGISTER FIELD TABLE TO PROGRAM MODES Register Programmed with Extended MRS Address BA1 BA0 A11 ~ A10/AP A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Function Mode Select RFU*1 DS RFU*1 PASR NOTES: 1. RFU(Reserved for future use) should stay "0" during MRS cycle. 2. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled. Mode Select Driver Strength PASR BA1 BA0 Mode A6 A5 Driver Strength A2 A1 A0 # of Banks 0 0 Normal MRS 0 0 Full 0 0 0 4 Banks 0 1 Reserved 0 1 1/2 0 0 1 2 Banks 1 0 EMRS for Mobile SDRAM 1 0 Reserved 0 1 0 1 Bank 1 1 Reserved 1 1 Reserved 0 1 1 Reserved Reserved Address 1 0 0 Reserved A11~A10/AP A9 A8 A7 A4 A3 1 0 1 Reserved 0 0 0 0 0 0 1 1 0 Reserved 1 1 1 Reserved EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength) Full Page Length x32 : 256Mb(512) |
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