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K4M56323LE-EN1L Datasheet(PDF) 10 Page - Samsung semiconductor

Part # K4M56323LE-EN1L
Description  2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
Download  12 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4M56323LE-EN1L Datasheet(HTML) 10 Page - Samsung semiconductor

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K4M56323LE - M(E)E/N/S/C/L/R
February 2004
Mobile-SDRAM
Normal MRS Mode
Test Mode
CAS Latency
Burst Type
Burst Length
A8
A7
Type
A6
A5
A4
Latency
A3
Type
A2
A1
A0
BT=0
BT=1
0
0
Mode Register Set
0
0
0
Reserved
0
Sequential
0
0
0
1
1
0
1
Reserved
0
0
1
1
1
Interleave
0
0
1
2
2
1
0
Reserved
0
1
0
2
Mode Select
0
1
0
4
4
1
1
Reserved
0
1
1
3
BA1 BA0
Mode
0
1
1
8
8
Write Burst Length
1
0
0
Reserved
0
0
Setting
for Nor-
mal MRS
1
0
0
Reserved
Reserved
A9
Length
1
0
1
Reserved
1
0
1
Reserved
Reserved
0
Burst
1
1
0
Reserved
1
1
0
Reserved
Reserved
1
Single Bit
1
1
1
Reserved
1
1
1
Full Page
Reserved
Register Programmed with Normal MRS
Address
BA0 ~ BA1
A11 ~ A10/AP
A9*2
A8
A7
A6
A5
A4
A3
A2
A1
A0
Function
"0" Setting for
Normal MRS
RFU*1
W.B.L
Test Mode
CAS Latency
BT
Burst Length
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Extended MRS
Address
BA1
BA0
A11 ~ A10/AP
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Function
Mode Select
RFU*1
DS
RFU*1
PASR
NOTES:
1. RFU(Reserved for future use) should stay "0" during MRS cycle.
2. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
Mode Select
Driver Strength
PASR
BA1
BA0
Mode
A6
A5
Driver Strength
A2
A1
A0
# of Banks
0
0
Normal MRS
0
0
Full
0
0
0
4 Banks
0
1
Reserved
0
1
1/2
0
0
1
2 Banks
1
0
EMRS for Mobile SDRAM
1
0
Reserved
0
1
0
1 Bank
1
1
Reserved
1
1
Reserved
0
1
1
Reserved
Reserved Address
1
0
0
Reserved
A11~A10/AP
A9
A8
A7
A4
A3
1
0
1
Reserved
0
0
0
0
0
0
1
1
0
Reserved
1
1
1
Reserved
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
Full Page Length x32 : 256Mb(512)


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