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IL66B Datasheet(PDF) 2 Page - Vishay Siliconix |
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IL66B Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number 83639 Rev. 1.5, 26-Oct-04 IL66B Vishay Semiconductors Output Coupler Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Current Transfer Ratio Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage BVCEO 60 V Emitter-collector breakdown voltage BVECO 5.0 V Power dissipation Pdiss 200 mW Derate linearly from 25 °C 2.6 mW/°C Parameter Test condition Symbol Value Unit Isolation test voltage t = 1.0 sec. VISO 5300 VRMS Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Total dissipation Ptot 250 mW Derate linearly from 25 °C 3.3 mW/°C Creepage path 7min mm Clearance path 7min mm Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Lead soldering time at 260 °C Tsld 10 sec. Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 10 mA VF 1.25 1.5 V Reverse current VR = 3.0 V IR 0.01 100 µA Capacitance VR = 0 CO 25 pF Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown voltage IC = 100 µABVCEO 60 V Collector-emitter leakage current VCE = 50 V, IF = 0 ICEO 1.0 100 nA Parameter Test condition Symbol Min Typ. Max Unit Saturation voltage IC = 10 mA VCEsat 1.0 V Parameter Test condition Part Symbol Min Typ. Max Unit Current Transfer Ratio IF = 2.0 mA, VCE = 5.0 V IL66B-1 CTR 200 % IL66B-2 CTR 750 1000 % |
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