NST3904DXV6T5 datasheet(2/8 Pages) ONSEMI

Part #	NST3904DXV6T5

Description	Dual General Purpose Transistor

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Manufacturer	ONSEMI [ON Semiconductor]

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NST3904DXV6T1, NST3904DXV6T5

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector - Emitter Breakdown Voltage (Note 2)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

40

-

Vdc

Collector - Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

60

-

Vdc

Emitter - Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

6.0

-

Vdc

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

IBL

-

50

nAdc

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

ICEX

-

50

nAdc

ON CHARACTERISTICS (Note 2)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

hFE

40

70

100

60

30

-

300

-

Collector - Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat)

-

0.2

0.3

Vdc

Base - Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VBE(sat)

0.65

-

0.85

0.95

Vdc

SMALL- SIGNAL CHARACTERISTICS

Current - Gain - Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

fT

300

-

MHz

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

-

4.0

pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

-

8.0

pF

2. Pulse Test: Pulse Width

≤ 300 µs; Duty Cycle ≤ 2.0%.

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