RN2961~RN2966

2001-06-07

1

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2961,RN2962,RN2963,RN2964,RN2965,RN2966

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l Including two devices in US6 (ultra super mini type with 6 leads)

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1961~RN1966

Equivalent Circuit and Bias Resistor Values

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

RN2961~2966

−50

V

RN2961~2964

−10

RN2965, 2966

−5

Collector current

−100

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature range

−55~150

°C

* : Total rating

JEDEC

―

EIAJ

―

TOSHIBA

2-2J1B

Weight: 6.8mg

Type No.

R1 (kΩ)R2 (kΩ)

RN2961

4.7

4.7

RN2962

10

10

RN2963

22

22

RN2964

47

47

RN2965

2.2

47

RN2966

4.7

47

Unit: mm