1

Transistor

Unit: mm

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Base

2:Collector

EIAJ:SC–71

3:Emitter

M Type Mold Package

Symbol

*

Ratings

–80

–80

–5

–1

– 0.5

1

150

–55 ~ +150

Unit

V

V

V

A

A

W

˚C

˚C

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

*

Conditions

min

–80

–80

–5

130

50

typ

100

– 0.2

– 0.85

85

11

max

– 0.1

330

– 0.4

–1.2

20

Unit

µA

V

V

V

V

V

MHz

pF

6.9

±0.1

0.55

±0.1

0.45

±0.05

2.5

±0.1

1.0

1.5

1.5 R0.9

R0.9

0.85

2.5

2.5

1

2

3

thickness of 1.7mm for the collector portion

Rank

R

S

130 ~ 220

185 ~ 330

2SA1762

Silicon PNP epitaxial planer type

For low-frequency driver amplification

Complementary to 2SC4606

q

q

Optimum for the driver stage of a low-frequency and 25 to 30W

output amplifier.