2SA1816 datasheet(1/1 Pages) PANASONIC

Part #	2SA1816

Description	Silicon PNP epitaxial planer type

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Transistor

2SA1816(Tentative)

Silicon PNP epitaxial planer type

For low-frequency high breakdown voltage amplification

s Features

q

High collector to emitter voltage VCEO.

s Absolute Maximum Ratings (Ta=25˚C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

–150

–5

–100

–50

300

150

–55 ~ +150

Unit

V

mA

mW

˚C

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

Noise voltage

Symbol

ICBO

VCEO

VEBO

hFE

*1

VCE(sat)

fT

Cob

NV

Conditions

VCB = –100V, IE = 0

IC = –100µA, IB = 0

IE = –10µA, IC = 0

VCE = –5V, IC = –10mA

IC = –30mA, IB = –3mA

VCB = –10V, IE = 10mA, f = 200MHz

VCB = –10V, IE = 0, f = 1MHz

VCE = –10V, IC = – 1mA, GV = 80dB

Rg = 100kΩ, Function = FLAT

min

–150

–5

90

typ

200

150

max

–1

450

–1

5

Unit

µA

V

MHz

pF

mV

Unit: mm

1:Emitter

2:Collector

EIAJ:SC–72

3:Base

New S Type Package

4.0

±0.2

marking

2.54

±0.15

1.27

123

*1h

FE Rank classification

Rank

Q

R

S

T

hFE

90 ~ 155

130 ~ 220

185 ~ 330

260 ~ 450

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