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2SA1858 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SA1858 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Transistor 2SA1858 Silicon PNP epitaxial planer type For general amplification s Features q High collector to emitter voltage VCEO. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –300 –300 –5 –100 –70 1 150 –55 ~ +150 Unit V V V mA mA W ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol VCEO VEBO hFE * VCE(sat) fT Cob Conditions IC = –100µA, IB = 0 IE = –1µA, IC = 0 VCE = –10V, IC = –5mA IC = –10mA, IB = –1mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min –300 –5 30 50 typ 7 max 150 – 0.6 Unit V V V MHz pF Unit: mm 1:Emitter 2:Collector 3:Base TO–92NL Package 5.0 ±0.2 1.27 123 1.27 4.0 ±0.2 0.45 +0.15 –0.1 0.45 +0.15 –0.1 0.7 ±0.1 2.54 ±0.15 *h FE Rank classification Rank P Q hFE 30 ~ 100 60 ~ 150 |
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