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2SA1890 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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2SA1890 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Transistor 2SA1890 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC5026 s Features q Low collector to emitter saturation voltage VCE(sat). q High collector to emitter voltage VCEO. q Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25˚C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC * Tj Tstg Ratings –80 –80 –5 –1.5 –1 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO VCBO VCEO VEBO hFE1 *1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –40V, IE = 0 IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –100mA VCE = –2V, IC = –500mA *2 IC = –500mA, IB = –50mA *2 IC = –500mA, IB = –50mA *2 VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz min –80 –80 –5 120 60 typ – 0.2 – 0.85 120 15 max – 0.1 340 – 0.3 –1.2 30 Unit µA V V V V V MHz pF Unit: mm 1:Base 2:Collector EIAJ:SC–62 3:Emitter Mini Power Type Package 4.5 ±0.1 3.0 ±0.15 1.5 ±0.1 0.4 ±0.08 0.5 ±0.08 1.5 ±0.1 0.4 ±0.04 1.6 ±0.2 45 ° marking 321 *1h FE1 Rank classification Rank Q R hFE1 120 ~ 240 170 ~ 340 * Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion Marking symbol : 1Z *2 Pulse measurement |
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