1

Transistor

2SA1890

Silicon PNP epitaxial planer type

For low-frequency output amplification

Complementary to 2SC5026

q

q

q

Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Junction temperature

Storage temperature

Symbol

*

Ratings

–80

–80

–5

–1.5

–1

1

150

–55 ~ +150

Unit

V

V

V

A

A

W

˚C

˚C

Parameter

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

*1

Conditions

*2

*2

*2

min

–80

–80

–5

120

60

typ

– 0.2

– 0.85

120

15

max

– 0.1

340

– 0.3

–1.2

30

Unit

µA

V

V

V

V

V

MHz

pF

Unit: mm

1:Base

2:Collector

EIAJ:SC–62

3:Emitter

Mini Power Type Package

4.5

±0.1

3.0

±0.15

1.5

±0.1

0.4

±0.08

0.5

±0.08

1.5

±0.1

0.4

±0.04

1.6

±0.2

45

°

marking

321

Rank

Q

R

120 ~ 240

170 ~ 340

thickness of 1.7mm for the collector portion

Marking symbol :

1Z