Part Name
         Description
2SA921

 Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) ( 2 Page)


PANASONIC
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2
Transistor
2SA921
0
200
160
40
120
80
0
500
400
300
200
100
450
350
250
150
50
Ambient temperature Ta (˚C)
0
–12
–10
–8
–2
–6
–4
0
–24
–20
–16
–12
–8
–4
Ta=25˚C
–30
µA
–45
µA
–40
µA
–10
µA
–15
µA
–25
µA
–35
µA
–5
µA
–20
µA
I
B=–50µA
Collector to emitter voltage V
CE
(V)
0
–2.0
–1.6
– 0.4
–1.2
– 0.8
0
–60
–50
–40
–30
–20
–10
V
CE=–5V
Ta=75˚C
–25˚C
25˚C
Base to emitter voltage V
BE
(V)
– 0.1
–1
–10
–100
– 0.3
–3
–30
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C/IB=10
Ta=75˚C
25˚C
–25˚C
Collector current I
C
(mA)
– 0.1
–1
–10
–100
– 0.3
–3
–30
0
1000
800
600
400
200
900
700
500
300
100
V
CE=–5V
Ta=75˚C
25˚C
–25˚C
Collector current I
C
(mA)
0.1
1
10
100
0.3
3
30
0
320
240
80
200
280
160
40
120
V
CB=–5V
Ta=25˚C
Emitter current I
E
(mA)
–1
–3
–10
–30
–100
0
10
8
6
4
2
9
7
5
3
1
I
E=0
f=1MHz
Ta=25˚C
Collector to base voltage V
CB
(V)
– 0.01
– 0.03
– 0.1
– 0.3
–1
0
120
100
80
60
40
20
V
CE=–10V
G
V=80dB
Function=FLAT
4.7k
R
g=100kΩ
22k
Collector current I
C
(mA)
PC —Ta
IC —VCE
IC —VBE
VCE(sat) —IC
hFE —IC
fT —IE
Cob —VCB
NV — IC
1  2 



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