Transistors

1

2SB0710, 2SB0710A

Silicon PNP epitaxial planer type

For general amplification

Complementary to 2SD0602 and 2SD0602A

I Features

• Large collector current I

C

• Mini type package, allowing downsizing of the equipment and

automatic insertion through the tape packing and the magazine

packing.

I Absolute Maximum Ratings T

a

= 25°C

1: Base

JEDEC: TO-236

2: Emitter

EIAJ: SC-59

3: Collector

Mini Type Package

Unit: mm

Parameter

Symbol

Rating

Unit

Collector to

2SB0710

−30

V

base voltage

2SB0710A

−60

Collector to

2SB0710

−25

V

emitter voltage

2SB0710A

−50

Emitter to base voltage

−5V

Peak collector current

−1A

Collector current

−500

mA

Collector power dissipation

200

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

I Electrical Characteristics T

Marking Symbol

• 2SB0710 : C

• 2SB0710A : D

0.40

+0.10

–0.05

2

1

3

(0.95) (0.95)

2.90

+0.20

–0.05

0.16

+0.10

–0.06

10

°

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector cutoff current

= −20 V, I

E

= 0

− 0.1

µA

Collector to

2SB0710

= −10 µA, I

E

= 0

−30

V

base voltage

2SB0710A

−60

Collector to

2SB0710

= −10 mA, I

B

= 0

−25

V

emitter voltage

2SB0710A

−50

Emitter to base voltage

−5V

1

2

= −10 V, I

C

= −150 mA

85

340

= −10 V, I

C

= −500 mA

40

1

− 0.35 − 0.6

V

1

= −300 mA, I

B

= −30 mA

−1.1

−1.5

V

Transition frequency

= −10 V, I

E

= 50 mA, f = 200 MHz

200

MHz

Collector output capacitance

6

15

pF

Rank

Q

R

S

No-rank

85 to 170

120 to 240

170 to 340

85 to 340

Marking

2SB0710

CQ

CR

CS

C

symbol

2SB0710A

DQ

DR

DS

D

Note) *1: Pulse measurement

*2: Rank classification

Product of no-rank is not classi-

fied and have no indication for

rank.