2SB1030A datasheet(1/2 Pages) PANASONIC

Part #	2SB1030A

Description	Silicon PNP epitaxial planer type(For low-frequency amplification)

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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Transistor

2SB1030, 2SB1030A

Silicon PNP epitaxial planer type

For low-frequency amplification

Complementary to 2SD1423 and 2SD1423A

s Features

q

Optimum for high-density mounting.

q

Allowing supply with the radial taping.

s Absolute Maximum Ratings (Ta=25˚C)

Unit: mm

Parameter

Collector to

base voltage

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

1:Emitter

2:Collector

EIAJ:SC–72

3:Base

New S Type Package

4.0

±0.2

marking

2.54

±0.15

1.27

123

Symbol

VCBO

VCEO

VEBO

ICP

IC

PC

Tj

Tstg

Ratings

–30

–60

–25

–50

–7

–1

– 0.5

300

150

–55 ~ +150

Unit

V

A

mW

˚C

2SB1030

2SB1030A

2SB1030

2SB1030A

s Electrical Characteristics (Ta=25˚C)

Parameter

Collector cutoff current

Collector to base

voltage

Collector to emitter

voltage

Emitter to base voltage

Forward current transfer ratio

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

ICBO

ICEO

VCBO

VCEO

VEBO

hFE1

*1

hFE2

VCE(sat)

fT

Cob

Conditions

VCB = –20V, IE = 0

VCE = –20V, IB = 0

IC = –10µA, IE = 0

IC = –2mA, IB = 0

IE = –10µA, IC = 0

VCE = –10V, IC = –150mA

*2

VCE = –10V, IC = –500mA

*2

IC = –300mA, IB = –30mA

*2

VCB = –10V, IE = 50mA, f = 200MHz

VCB = –10V, IE = 0, f = 1MHz

min

–30

–60

–25

–50

–7

85

40

typ

– 0.35

200

6

max

– 0.1

–1

340

– 0.6

15

Unit

µA

V

MHz

pF

*1h

FE1 Rank classification

Rank

Q

R

S

hFE1

85 ~ 170

120 ~ 240

170 ~ 340

2SB1030

2SB1030A

2SB1030

2SB1030A

*2 Pulse measurement

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