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RN2117 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # RN2117
Description  Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN2117 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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RN2114
~RN2118
2001-06-07
2
Electrical Characteristics (Ta = 25
°°°°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
RN2114~2118
ICBO
VCB = −50V, IE = 0
−100
nA
Collector cut-off
current
RN2114~2118
ICEO
VCE = −50V, IB = 0
−500
nA
RN2114
VEB = −5V, IC = 0
−0.35
−0.65
RN2115
VEB = −6V, IC = 0
−0.37
−0.71
RN2116
VEB = −7V, IC = 0
−0.36
−0.68
RN2117
VEB = −15V, IC = 0
−0.78
−1.46
Emitter cut-off current
RN2118
IEBO
VEB = −25V, IC = 0
−0.33
−0.63
mA
RN2114~16
18
50
DC current gain
RN2117
hFE
VCE = −5V,
IC = −10mA
30
Collector-emitter
saturation voltage
RN2114~2118
VCE (sat)
IC = −5mA, IB = −0.25mA
−0.1
−0.3
V
RN2114
−0.5
−2.0
RN2115
−0.6
−2.5
RN2116
−0.7
−2.5
RN2117
−1.5
−3.5
Input voltage (ON)
RN2118
VI (ON)
VCE = −0.2V, IC = −5mA
−2.5
−10.0
V
RN2114
−0.3
−0.9
RN2115
−0.3
−1.0
RN2116
−0.3
−1.1
RN2117
−0.3
−3.0
Input voltage (OFF)
RN2118
VI (OFF)
VCE = −5V, IC = −0.1mA
−0.5
−5.7
V
Transition frequency
RN2114~2118
fT
VCE = −10V, IC = −5mA
200
MHz
Collector Output
capacitance
RN2114~2118
Cob
VCB = −10V, IE = 0,
f = 1MHz
3.0
6.0
pF
RN2114
0.7
1.0
1.3
RN2115
1.54
2.2
2.86
RN2116
3.29
4.7
6.11
RN2117
7.0
10.0
13.0
Input resistor
RN2118
R1
32.9
47.0
61.1
kΩ
RN2114
0.1
RN2115
0.22
RN2116
0.47
RN2117
2.13
Resistor ratio
RN2118
R1/R2
4.7


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