TMS28F033 datasheet(8/52 Pages) TI

Part #	TMS28F033

Description	4194304-BIT SYNCHRONOUS FLASH MEMORY

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Manufacturer	TI [Texas Instruments]

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TMS28F033

4194304-BIT

SYNCHRONOUS FLASH MEMORY

SMJS833 – NOVEMBER 1997

8

POST OFFICE BOX 1443

• HOUSTON, TEXAS 77251–1443

operation (continued)

Table 4. Command-State-Machine Codes for Device Mode Selection

COMMAND

CODE ON

DQ0 – DQ7†

DEVICE MODE

02h

Block-erase setup of overlay block

04h

Program setup of overlay block

06h

Enable/disable overlay block for reads

0Dh

Block-erase confirm of overlay block

20h

Block-erase setup of main array

40h

Program setup of main array

50h

Clear status register

60h

Enable/disable low-power programming

70h

Read status register

90h

Silicon signature selection

96h

Load device-configuration register

D0h

Block-erase confirm of main array

F0h

Reduced power

FFh

Read array

† DQ0 is the least significant bit. DQ8 – DQ31 can be any valid 2-state level.

command definition

Once a specific command code has been entered, the WSM executes an internal algorithm that generates the

necessary timing signals to program, erase, and verify data. See Table 5 for the CSM command definitions and

the data for each of the bus cycles. See Table 6 for the addresses required to access the algorithm selection

codes.

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