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K4E660411D-JC60 Datasheet(PDF) 7 Page - Samsung semiconductor |
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K4E660411D-JC60 Datasheet(HTML) 7 Page - Samsung semiconductor |
7 / 21 page CMOS DRAM K4E660411D, K4E640411D TEST MODE CYCLE Parameter Symbol -50 -60 Units Note Min Max Min Max Random read or write cycle time tRC 89 109 ns Read-modify-write cycle time tRWC 121 145 ns Access time from RAS tRAC 55 65 ns 3,4,10,12 Access time from CAS tCAC 18 20 ns 3,4,5,12 Access time from column address tAA 30 35 ns 3,10,12 RAS pulse width tRAS 55 10K 65 10K ns CAS pulse width tCAS 13 10K 15 10K ns RAS hold time tRSH 18 20 ns CAS hold time tCSH 43 50 ns Column Address to RAS lead time tRAL 30 35 ns CAS to W delay time tCWD 35 39 ns 7 RAS to W delay time tRWD 72 84 ns 7 Column Address to W delay time tAWD 47 54 ns 7 Hyper Page cycle time tHPC 25 30 ns 13 Hyper Page read-modify-write cycle time tHPRWC 53 61 ns 13 RAS pulse width (Hyper page cycle) tRASP 55 200K 65 200K ns Access time from CAS precharge tCPA 33 40 ns 3 OE access time tOEA 18 20 ns OE to data delay tOED 18 20 ns OE command hold time tOEH 18 20 ns ( Note 11 ) |
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